TECHNICAL DATA
IW4066B
Quad Bilateral Switch
High-Voltage Silicon-Gate CMOS
The IW4066B is a quad bilateral switch intended for the transmission
or multiplexing of analog or digital signals. In addition, the on-state
resistance is relatively constant over the full input-signal range.
The IW4066B consists of four independent bilateral switches. A single
control signal is required per switch. Both the p and the n device in a
given switch are biased on or off simultaneously by the control signal.(As
show in Fig.1.)The well of the n-channel device on each switch is either
tied to the input when the switch is on or to GND when the switch is off.
This configuration eliminates the variation of the switch-transistor
threshold voltage with input signal, and thus keeps the on-state resistance
low over the full operating-signal range.
The advantages over single-channel switches include peak input-
signal voltage swings equal to the full supply voltage, and more constant
on-state impedance over the input-signal range.
•
Operating Voltage Range: 3.0 to 18 V
•
Maximum input current of 1
μA
at 18 V over full package-temperature
•
range; 100 nA at 18 V and 25°C
•
Noise margin (over full package temperature range):
1.0 V min @ 5.0 V supply
2.0 V min @ 10.0 V supply
2.5 V min @ 15.0 V supply
ORDERING INFORMATION
IW4066BN Plastic
IW4066BD SOIC
T
A
= -55° to 125° C for all packages
PIN ASSIGNMENT
LOGIC DIAGRAM
FUNCTION TABLE
On/Off
Control Input
L
H
State of
Analog Switch
Off
On
PIN 14 =V
CC
PIN 7 = GND
Rev. 00
IW4066B
MAXIMUM RATINGS
*
Symbol
V
CC
V
IN
V
OUT
I
IN
P
D
P
D
Tstg
T
L
*
Parameter
DC Supply Voltage (Referenced to GND)
DC Input Voltage (Referenced to GND)
DC Output Voltage (Referenced to GND)
DC Input Current, per Pin
Power Dissipation in Still Air, Plastic DIP+
SOIC Package+
Power Dissipation per Output Transistor
Storage Temperature
Lead Temperature, 1 mm from Case for 10 Seconds
(Plastic DIP or SOIC Package)
Value
-0.5 to +20
-0.5 to V
CC
+0.5
-0.5 to V
CC
+0.5
±10
750
500
100
-65 to +150
260
Unit
V
V
V
mA
mW
mW
°C
°C
Maximum Ratings are those values beyond which damage to the device may occur.
Functional operation should be restricted to the Recommended Operating Conditions.
+Derating - Plastic DIP: - 10 mW/°C from 65° to 125°C
SOIC Package: : - 7 mW/°C from 65° to 125°C
RECOMMENDED OPERATING CONDITIONS
Symbol
V
CC
V
IN
, V
OUT
T
A
Parameter
DC Supply Voltage (Referenced to GND)
DC Input Voltage, Output Voltage (Referenced to GND)
Operating Temperature, All Package Types
Min
3.0
0
-55
Max
18
V
CC
+125
Unit
V
V
°C
This device contains protection circuitry to guard against damage due to high static voltages or electric fields.
However, precautions must be taken to avoid applications of any voltage higher than maximum rated voltages to this
high-impedance circuit. For proper operation, V
IN
and V
OUT
should be constrained to the range GND≤(V
IN
or
V
OUT
)≤V
CC
.
Unused inputs must always be tied to an appropriate logic voltage level (e.g., either GND or V
CC
). Unused
outputs must be left open.
Rev. 00
IW4066B
DC ELECTRICAL CHARACTERISTICS
(Voltages Referenced to GND)
V
CC
Symbol
V
IH
Parameter
Minimum High-Level
Voltage ON/Off
Control Inputs
Minimum Low-Level
Voltage ON/Off
Control Inputs
Maximum Input
Leakage Current,
ON/OFF Control
Inputs
Maximum Quiescent
Supply Current
(per Package)
Maximum “ON”
Resistance
Test Conditions
R
ON
= Per Spec
V
5.0
10
15
5.0
10
15
18
1
2
2
±0.1
Guaranteed Limit
≥-55°C
25
°C
3.5(Min)
7(Min)
11(Min)
1
2
2
±0.1
1
2
2
±1.0
≤125
°C
Unit
V
V
IL
R
ON
= Per Spec
V
I
IN
V
IN
= V
CC
or GND
μA
I
CC
V
IN
= V
CC
or GND
5.0
10
15
20
5.0
10
15
0.25
0.5
1
5
800
310
200
0.25
0.5
1
5
1050
400
240
7.5
15
30
150
1300
550
320
μA
R
ON
V
C
= V
CC
R
L
=10 kΩ returned
V - GND
to
CC
2
V
IS
= GND to V
CC
V
C
= V
CC
R
L
=10 kΩ
Ω
ΔR
ON
Maximum Difference
in “ON” Resistance
Between Any Two
Channels in the Same
Package
Maximum Off-
Channel Leakage
Current, Any One
Channel
Maximum On-
Channel Leakage
Current, Any One
Channel
5.0
10
15
-
-
-
15
10
5
-
-
-
Ω
I
OFF
V
C
= 0 V
V
IS
=18 V; V
OS
= 0 V
V
IS
=0 V; V
OS
= 18V
V
C
= 0 V
V
IS
=18 V; V
OS
= 0 V
V
IS
=0 V; V
OS
= 18V
18
±0.1
±0.1
±1.0
μA
I
ON
18
±0.1
±0.1
±1.0
μA
Rev. 00
IW4066B
AC ELECTRICAL CHARACTERISTICS
(C
L
=50pF, R
L
=200kΩ, Input t
r
=t
f
=20 ns)
V
CC
Symbol
t
PLH
, t
PHL
Parameter
Maximum Propagation Delay, Analog Input to
Analog Output (Figure 2)
Maximum Propagation Delay, ON/OFF
Control to Analog Output (Figure 3)
Maximum Capacitance
ON/OFF Control Input
Control Input = GND
Analog I/O
Feedthrough
V
5.0
10
15
5.0
10
15
-
15
7.5
0.6
40
20
15
70
40
30
Guaranteed Limit
≥-55°C
25°C
40
20
15
70
40
30
≤125°C
80
40
30
140
80
60
Unit
ns
t
PLZ
, t
PHZ
,
t
PZL
, t
PZH
C
ns
pF
ADDITIONAL APPLICATION CHARACTERISTICS
(Voltages Referenced to GND Unless Noted)
V
CC
Symbol
THD
BW
Parameter
Total Harmonic
Distortion
Maximum On-
Channel Bandwidth
or Minimum
Frequency Response
Maximum On-
Channel Bandwidth
or Minimum
Frequency Response
Maximum On-
Channel Bandwidth
or Minimum
Frequency Response
Cross talk (Control
Input to Signal
Output)
Maximum Control
Input Repetition Rate
Test Conditions
V
C
= V
CC
, GND = -5 V
R
L
= 10 kΩ, f
IS
=1 kHz sine wave
V
C
= V
CC
, GND = -5 V
R
L
= 1 kΩ
V
5
5
Limit
*
25°C
0.4
40
Unit
%
MHz
BW
V
C
= GND , V
IS
= 5 V
R
L
= 1 kΩ
10
1
MHz
BW
V
C
(A) = V
CC
= 5 V
V
C
(B) = GND = -5 V
V
IS
(A) = 5 V
P - P
,50
Ω
source
R
L
= 1 kΩ
V
C
= 10 V
t
r
, t
f
= 20 ns
R
L
= 10 kΩ
V
IS
= V
CC
, R
L
= 1 kΩ
C
L
= 50 pF
V
C
= 10 V (square wave centered on 5 V)
t
r
, t
f
= 20 ns,
V
OS
= 1/2 V
OS
@1 kHz
5
8
MHz
-
10
50
mV
-
5
10
15
6
9
9.5
MHz
*
Guaranteed limits not tested. Determined by design and verified by qualification.
Rev. 00
IW4066B
Switch Input
I
IS
(mA)
V
CC
(V)
5
5
10
10
15
15
V
IS
(V)
0
5
0
10
0
15
-55
°C
0.64
-0.64
1.6
-1.6
4.2
-4.2
+25
°C
0.51
-0.51
1.3
-1.3
3.4
-3.4
+125
°C
0.36
-0.36
0.9
-0.9
2.4
-2.4
Switch Output,
V
OS
(V)
Min
-
4.6
-
9.5
-
13.5
Max
0.4
-
0.5
-
1.5
-
GND
≤
V
IS
≤
V
CC
Figure 1. Schematic diagram of 1 of 4 identical switches and its associated control circuitry.
Rev. 00
